[GS-1259]发行于2013-03-22时长101分钟出品商是GOS,GS-1259作品种子搜索下载,[SBDS-010]发行于2013-08-25时长123分钟出品商是サイドビー,SBDS-010作品种子搜索下载
[GS-1259]发行于2013-03-22时长101分钟出品商是GOS,GS-1259作品种子搜索下载,[SBDS-010]发行于2013-08-25时长123分钟出品商是サイドビー,SBDS-010作品种子搜索下载
Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution X-ray diffraction (HRXRD) and atomic force microscopy (A... H Fu,H Chen,X Huang,... 被引量: 3发表: ...
3.4. Brief summary on SBDs In the SBD section, we introduced the Ga2O3 based SBDs with or without epitaxial films as shown in Fig. 9, and the de- vices were fabricated based on the (010)-, (2¯01)-, (100)-, and (001)-oriented Ga2O3 single crystal substrates. To date, Pt,...
1Introduction Schottky barrier diodes(SBDs) are the basis of a number of semiconductor electronic devices, including microwave diodes, field-effect transistors (FETs), solar cells and photodetectors.Schottky contactsare rectifying metal–semiconductor (MS) junctions and their forward current consists of ma...
On Ga2O3 (001) substrates, vertical trench SBDs with four different fin-channel orientations are identified and compared. Fin channels with (100)-like sidewalls in the [010] direction result in the highest forward current, whereas alternative channel orientations all result in a shallow turn-...
The trench SBDs oriented along [100] and [010] directions showed similar turn-on voltage and and resistance. In comparison with fins reported previously that were fabricated using dry etching exhibited depletion of carriers in the drift layer from plasma damage and strong dependence on fin ...