1. GS-065-011-1-L | GaNThe GS-065-011-1-L is a bottom-side cooled transistor in a 5x6 mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high efficiency power switching.
2. GS-065-060-5-T-A | GaNThe GS-065-060-5-T-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with...
3. 内置GaN Systems GS-065-011-1-L氮化镓器件,InfinityLAB氮化镓功率管采用GaN Systems GS-065-011-1-L,耐压650V,导阻150mΩ,是一种增强型硅基GaN功率晶体管,具有耐高压、高电流、高开关频率等特性,十分适合应用于小体积、高功率的产品中。
4. GS-065-004-1-L GaN Systems | MouserGS-065-004-1-L GaN Systems MOSFET 650V, 4A, GaN E-HEMT, 5x6 PDFN, Bottom-side cooled 数据表, 库存, 价格.
5. 大联大推出基于安森美GS-065-011-1-L功率晶体管的65W PD电源方案其旗下友尚推出基于安森美(onsemi)NCP1345控制器和氮化镓系统公司(GaN System)GS-065-011-1-L功率晶体管的65W PD电源方案。 图示1-大联大友尚基于onsemi和GaN System产品的65W PD电源方案的展示板图 ...
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